Single award · grant
Development of Large Silicon Carbide (Sic) Substrates and Homoepitaxial Processes
Award ID: FA86501721727
A single federal award, with both ends of the trail linked.
$20.8M
Total award value
Award FA86501721727 is a grant from the Department of Defense, $20.8M obligated, FY2017 to FY2027, for Development of Large Silicon Carbide (Sic) Substrates and Homoepitaxial Processes. Source
Description
TAS::57 3600::TAS Development of Large Silicon Carbide (Sic) Substrates and Homoepitaxial Processes
Award details
Award typeGrant
FAINFA86501721727
Action date2017
Period114 mo
Awarding agencyDepartment of Defense →
RecipientOutside our Phase 1 contractor set: see methodology
Place of performance—
Category—
Competed?Not recordedSource
Total (exact)$20,802,062
More from Department of Defense
awarded 2016$51.3B
awarded 2017$35.7B
awarded 2017$35.1B
awarded 2001$34.2B
awarded 2011$32B
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